| PART |
Description |
Maker |
| AP9575GJ-HF AP9575GH-HF AP9575GH-HF-14 AP9575GJ-HF |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| AP2604GY-HF AP2604GY-HF-14 |
Fast Switching Characteristic, Lower Gate Charge
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| AP2334GN-HF |
Fast Switching Characteristic, Lower Gate Charge
|
Advanced Power Electronics Corp.
|
| AP9620AGM-HF AP9620AGM-HF-14 |
Capable of 2.5V Gate Drive, Lower On-resistance
Fast Switching Characteristic
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| AP60T06GP-HF |
Simple Drive Requirement, Lower On-resistance, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| SGB10N60A07 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB20N60 SGB20N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP20N60 SGP20N6009 SGW20N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| AP2310GK-HF AP2310GK-HF-14 |
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
Infineon Technologies A...
|
